PC015HVA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PC015HVA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.6 nS
Cossⓘ - Capacitancia de salida: 42 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de PC015HVA MOSFET
PC015HVA datasheet
pc015hva.pdf
Dual N-Channel Enhancement Mode PC015HVA NIKO-SEM SOP-8 Field Effect Transistor Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 300m 150V 1.4A G GATE D DRAIN S SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TA =... See More ⇒
pc015hv.pdf
PC015HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 300m @VGS = 10V 150V 1.6A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 TA = 25 C 1.6 ID Continuous Drain Current TA= 70 C 1.3 A IDM 16 Pulsed Drain C... See More ⇒
pc015bd.pdf
PC015BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 300m @VGS = 10V 150V 6A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 6 ID Continuous Drain Current2 TC = 100 C 4 A IDM 15 Pulsed Drain Current1,2 IAS Avalanche Current 5.5 ... See More ⇒
pc015bda.pdf
N-Channel Enhancement Mode PC015BDA NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 150V 300m 6.4A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 6.4 Continuous Drain C... See More ⇒
Otros transistores... PB5C5JW , PB5G8JW , PB600BX , PB606BX , PB6C4JU , PB6D2BX , PB6W8BX , PC015BDA , IRF530 , PC561BA , PD515BA , PD551BA , PD5B3BA , PD5B9BA , PD5C1BA , PD5C9BA , PD5E8BA .
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