FQD4P25TMWS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQD4P25TMWS
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm
Encapsulados: TO252
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FQD4P25TMWS datasheet
fqd4p25tm ws.pdf
November 2013 FQD4P25TM_WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Description Features This P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = -1.55 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC) technology has been especi
fqd4p25tm-ws.pdf
FQD4P25TM-WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, Description ID = -1.55 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC) produced using ON Semiconductor Semiconductor s Low Crss (Typ. 10.3 pF) proprietary planar stripe and DMOS technology. This advanced MOSFET t
fqd4p25.pdf
December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn
fqd4p25 fqu4p25.pdf
December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn
Otros transistores... FQP5N60C, FQPF5N50C, FQP65N06, FQP6N40C, FQU2N90, FQP6N40CF, FQU2N50B, FQP6N80C, AOD4184A, FQP6N90C, FQP70N10, FCP20N60, FQP7N80C, FCA20N60, FQP7P06, FQP85N06, FQP8N80C
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