FQD4P25TMWS - аналоги и даташиты транзистора

 

FQD4P25TMWS - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQD4P25TMWS
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.1 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для FQD4P25TMWS

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQD4P25TMWS Datasheet (PDF)

 5.1. Size:980K  fairchild semi
 fqd4p25tm ws.pdf pdf_icon

FQD4P25TMWS

November 2013FQD4P25TM_WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Description FeaturesThis P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = -1.55 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC)technology has been especi

 5.2. Size:2975K  onsemi
 fqd4p25tm-ws.pdf pdf_icon

FQD4P25TMWS

FQD4P25TM-WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,DescriptionID = -1.55 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC)produced using ON Semiconductor Semiconductors Low Crss (Typ. 10.3 pF)proprietary planar stripe and DMOS technology. This advanced MOSFET t

 7.1. Size:591K  fairchild semi
 fqd4p25.pdf pdf_icon

FQD4P25TMWS

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

 7.2. Size:585K  fairchild semi
 fqd4p25 fqu4p25.pdf pdf_icon

FQD4P25TMWS

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQP5N60C , FQPF5N50C , FQP65N06 , FQP6N40C , FQU2N90 , FQP6N40CF , FQU2N50B , FQP6N80C , HY1906P , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C .

History: 2SK3666 | FS70UM-06 | UTC7N65L | KF5N40D | 2N7271H1 | 2N6786 | SVF4N60CAD

 

 
Back to Top

 


 
.