FQD4P25TMWS - описание и поиск аналогов

 

FQD4P25TMWS. Аналоги и основные параметры

Наименование производителя: FQD4P25TMWS

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.1 Ohm

Тип корпуса: TO252

Аналог (замена) для FQD4P25TMWS

- подборⓘ MOSFET транзистора по параметрам

 

FQD4P25TMWS даташит

 5.1. Size:980K  fairchild semi
 fqd4p25tm ws.pdf pdf_icon

FQD4P25TMWS

November 2013 FQD4P25TM_WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Description Features This P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = -1.55 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC) technology has been especi

 5.2. Size:2975K  onsemi
 fqd4p25tm-ws.pdf pdf_icon

FQD4P25TMWS

FQD4P25TM-WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V, Description ID = -1.55 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC) produced using ON Semiconductor Semiconductor s Low Crss (Typ. 10.3 pF) proprietary planar stripe and DMOS technology. This advanced MOSFET t

 7.1. Size:591K  fairchild semi
 fqd4p25.pdf pdf_icon

FQD4P25TMWS

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn

 7.2. Size:585K  fairchild semi
 fqd4p25 fqu4p25.pdf pdf_icon

FQD4P25TMWS

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQP5N60C , FQPF5N50C , FQP65N06 , FQP6N40C , FQU2N90 , FQP6N40CF , FQU2N50B , FQP6N80C , AOD4184A , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C .

History: LND2N65

 

 

 

 

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