Справочник MOSFET. FQD4P25TM_WS

 

FQD4P25TM_WS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD4P25TM_WS

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 45 W

Предельно допустимое напряжение сток-исток (Uds): 250 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 3.1 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 14 nC

Сопротивление сток-исток открытого транзистора (Rds): 2.1 Ohm

Тип корпуса: TO252

Аналог (замена) для FQD4P25TM_WS

 

 

FQD4P25TM_WS Datasheet (PDF)

1.1. fqd4p25tm ws.pdf Size:980K _fairchild_semi

FQD4P25TM_WS FQD4P25TM_WS

November 2013 FQD4P25TM_WS P-Channel QFET® MOSFET -250 V, -3.1 A, 2.1 Ω Description Features This P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = -1.55 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 10 nC) technology has been especi

3.1. fqd4p25 fqu4p25.pdf Size:585K _fairchild_semi

FQD4P25TM_WS FQD4P25TM_WS

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced technology is espe

3.2. fqd4p25.pdf Size:591K _fairchild_semi

FQD4P25TM_WS FQD4P25TM_WS

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 10.3 pF) This advanced techn

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