FQP7P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP7P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 6.7 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.41 Ohm
Encapsulados: TO220
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FQP7P06 datasheet
fqp7p06.pdf
May 2001 TM QFET FQP7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -7A, -60V, RDS(on) = 0.41 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to
fqp7p06.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqp7p20.pdf
April 2000 TM QFET QFET QFET QFET 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has bee
Otros transistores... FQU2N50B, FQP6N80C, FQD4P25TMWS, FQP6N90C, FQP70N10, FCP20N60, FQP7N80C, FCA20N60, IRFZ44N, FQP85N06, FQP8N80C, FCPF11N60T, FQP8N90C, FQP8P10, FQP9N30, FQP9N90C, FQP9P25
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