FQP7P06 Datasheet. Specs and Replacement

Type Designator: FQP7P06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm

Package: TO220

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FQP7P06 datasheet

 ..1. Size:657K  fairchild semi
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FQP7P06

May 2001 TM QFET FQP7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -7A, -60V, RDS(on) = 0.41 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒

 ..2. Size:794K  onsemi
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FQP7P06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:693K  fairchild semi
 fqp7p20.pdf pdf_icon

FQP7P06

April 2000 TM QFET QFET QFET QFET 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has bee... See More ⇒

Detailed specifications: FQU2N50B, FQP6N80C, FQD4P25TMWS, FQP6N90C, FQP70N10, FCP20N60, FQP7N80C, FCA20N60, IRF3205, FQP85N06, FQP8N80C, FCPF11N60T, FQP8N90C, FQP8P10, FQP9N30, FQP9N90C, FQP9P25

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