FQP7P06 Specs and Replacement
Type Designator: FQP7P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm
Package: TO220
FQP7P06 substitution
FQP7P06 Specs
fqp7p06.pdf
May 2001 TM QFET FQP7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -7A, -60V, RDS(on) = 0.41 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to... See More ⇒
fqp7p06.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fqp7p20.pdf
April 2000 TM QFET QFET QFET QFET 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has bee... See More ⇒
Detailed specifications: FQU2N50B , FQP6N80C , FQD4P25TMWS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , IRFZ44N , FQP85N06 , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 .
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Keywords - FQP7P06 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AUIRLZ24NL
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