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PP9C15AD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PP9C15AD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 115 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 53 nS
   Cossⓘ - Capacitancia de salida: 308 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm
   Paquete / Cubierta: TO-252
 

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PP9C15AD Datasheet (PDF)

 ..1. Size:315K  niko-sem
pp9c15ad.pdf pdf_icon

PP9C15AD

N-Channel Enhancement Mode PP9C15AD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 70A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =

 7.1. Size:324K  niko-sem
pp9c15af.pdf pdf_icon

PP9C15AD

N-Channel Enhancement Mode PP9C15AF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 50A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =

 7.2. Size:316K  niko-sem
pp9c15at.pdf pdf_icon

PP9C15AD

N-Channel Enhancement Mode PP9C15AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 89A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =

 7.3. Size:369K  niko-sem
pp9c15ak.pdf pdf_icon

PP9C15AD

N-Channel Enhancement Mode PP9C15AK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G150V 9.3m 83A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source

Otros transistores... PP4B10AF , PP4B10AK , PP4B10AS , PP4B10AT , PP4B10BD , PP4B10BF , PP4B10BK , PP4B10BS , IRF540 , PP9C15AF , PP9C15AK , PP9C15AT , PP9H06BD , PP9H06BEA , PP9H06BI , PP9H06BK , PP9H06BV .

History: AP9575GS-HF | PJV1702 | BSR315P | HM3421 | SIHFI820G | IRF2804LPBF | AP2301GN

 

 
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