PP9C15AD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PP9C15AD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 115 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 308 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de PP9C15AD MOSFET
PP9C15AD datasheet
pp9c15ad.pdf
N-Channel Enhancement Mode PP9C15AD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 70A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =
pp9c15af.pdf
N-Channel Enhancement Mode PP9C15AF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 50A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =
pp9c15at.pdf
N-Channel Enhancement Mode PP9C15AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 89A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =
pp9c15ak.pdf
N-Channel Enhancement Mode PP9C15AK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 150V 9.3m 83A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source
Otros transistores... PP4B10AF , PP4B10AK , PP4B10AS , PP4B10AT , PP4B10BD , PP4B10BF , PP4B10BK , PP4B10BS , IRF540N , PP9C15AF , PP9C15AK , PP9C15AT , PP9H06BD , PP9H06BEA , PP9H06BI , PP9H06BK , PP9H06BV .
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