FQP8N80C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP8N80C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 178 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 35 nC
Resistencia entre drenaje y fuente RDS(on): 1.55 Ohm
Paquete / Cubierta: TO220
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FQP8N80C Datasheet (PDF)
fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf
January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has
fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf
December 2013FQP8N80C / FQPF8N80C / FQPF8N80CYDTUN-Channel QFET MOSFET800 V, 8.0 A, 1.55 Description FeaturesThis N-Channel enhancement mode power MOSFET is 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 4.0 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC)tec
fqp8n90c fqpf8n90c.pdf
QFETFQP8N90C/FQPF8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
fqp8n60c fqpf8n60c.pdf
QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
fqp8n60c.pdf
April 2014FQP8N60CN-Channel QFET MOSFET600 V, 7.5 A, 1.2 DescriptionFeaturesThese N-Channel enhancement mode power field effect 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 3.75 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to mi
fqp8n60c fqpf8n60c.pdf
QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 6N80L-TA3-T
