FQP8N80C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP8N80C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 178 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.55 Ohm

Encapsulados: TO220

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FQP8N80C datasheet

 ..1. Size:1280K  fairchild semi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf pdf_icon

FQP8N80C

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has

 ..2. Size:1146K  onsemi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf pdf_icon

FQP8N80C

December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET 800 V, 8.0 A, 1.55 Description Features This N-Channel enhancement mode power MOSFET is 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 4.0 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC) tec

 9.1. Size:865K  fairchild semi
 fqp8n90c fqpf8n90c.pdf pdf_icon

FQP8N80C

QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 9.2. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQP8N80C

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

MOSTRAR MÁS

Otros transistores... FQD4P25TMWS, FQP6N90C, FQP70N10, FCP20N60, FQP7N80C, FCA20N60, FQP7P06, FQP85N06, IRF740, FCPF11N60T, FQP8N90C, FQP8P10, FQP9N30, FQP9N90C, FQP9P25, FQPF10N20C, FDP39N20