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FQP8N80C Specs and Replacement


   Type Designator: FQP8N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO220
 

 FQP8N80C substitution

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FQP8N80C Specs

 ..1. Size:1280K  fairchild semi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf pdf_icon

FQP8N80C

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has ... See More ⇒

 ..2. Size:1146K  onsemi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf pdf_icon

FQP8N80C

December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET 800 V, 8.0 A, 1.55 Description Features This N-Channel enhancement mode power MOSFET is 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 4.0 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC) tec... See More ⇒

 9.1. Size:865K  fairchild semi
 fqp8n90c fqpf8n90c.pdf pdf_icon

FQP8N80C

QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to... See More ⇒

 9.2. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQP8N80C

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to... See More ⇒

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Detailed specifications: FQD4P25TMWS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , IRF740 , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C , FDP39N20 .

Keywords - FQP8N80C MOSFET specs

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