FQP8N90C Todos los transistores

 

FQP8N90C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP8N90C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 171 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 35 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

FQP8N90C Datasheet (PDF)

 ..1. Size:865K  fairchild semi
 fqp8n90c fqpf8n90c.pdf pdf_icon

FQP8N90C

QFETFQP8N90C/FQPF8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 ..2. Size:1382K  onsemi
 fqp8n90c fqpf8n90c.pdf pdf_icon

FQP8N90C

 9.1. Size:1280K  fairchild semi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf pdf_icon

FQP8N90C

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has

 9.2. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQP8N90C

QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

MOSTRAR MÁS

Otros transistores... FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , IRF840 , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C .

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