All MOSFET. FQP8N90C Datasheet

 

FQP8N90C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP8N90C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 171 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 35 nC

Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm

Package: TO220

FQP8N90C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQP8N90C Datasheet (PDF)

1.1. fqp8n90c fqpf8n90c.pdf Size:865K _fairchild_semi

FQP8N90C
FQP8N90C

QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switc

5.1. fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf Size:1280K _fairchild_semi

FQP8N90C
FQP8N90C

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especial

5.2. fqp8n60c fqpf8n60c.pdf Size:927K _fairchild_semi

FQP8N90C
FQP8N90C

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switc

 5.3. fqp8n60c.pdf Size:1332K _fairchild_semi

FQP8N90C
FQP8N90C

April 2014 FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω Description Features These N-Channel enhancement mode power field effect 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, • transistors are produced using Fairchild s proprietary, ID = 3.75 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tailored to mi

Datasheet: FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , IRF840 , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C .

 
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