FQP8N90C Datasheet and Replacement
Type Designator: FQP8N90C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 171 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO220
FQP8N90C substitution
FQP8N90C Datasheet (PDF)
fqp8n90c fqpf8n90c.pdf

QFETFQP8N90C/FQPF8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has
fqp8n60c fqpf8n60c.pdf

QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
Datasheet: FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , 20N60 , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C .
History: AP1005BSQ | 2SK3262-01MR | 2N6789LCC4 | 2N6792U | FQP5N40 | FDD5614P | AP13P15GJ-HF
Keywords - FQP8N90C MOSFET datasheet
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History: AP1005BSQ | 2SK3262-01MR | 2N6789LCC4 | 2N6792U | FQP5N40 | FDD5614P | AP13P15GJ-HF



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