FQP8P10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP8P10

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm

Encapsulados: TO220

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FQP8P10 datasheet

 ..1. Size:662K  fairchild semi
 fqp8p10.pdf pdf_icon

FQP8P10

TM QFET FQP8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to F

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 fqp8p10.pdf pdf_icon

FQP8P10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FCP20N60, FQP7N80C, FCA20N60, FQP7P06, FQP85N06, FQP8N80C, FCPF11N60T, FQP8N90C, IRF540N, FQP9N30, FQP9N90C, FQP9P25, FQPF10N20C, FDP39N20, FQPF10N50CF, FQPF11N40C, FDU6N50