All MOSFET. FQP8P10 Datasheet


FQP8P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP8P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 12 nC

Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Package: TO220

FQP8P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FQP8P10 Datasheet (PDF)

1.1. fqp8p10.pdf Size:662K _fairchild_semi


TM QFET FQP8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast switching

Datasheet: FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , FQP8N90C , BS170 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C , FDU6N50 .


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