FQP8P10 Specs and Replacement
Type Designator: FQP8P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: TO220
FQP8P10 substitution
FQP8P10 Specs
fqp8p10.pdf
TM QFET FQP8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to F... See More ⇒
fqp8p10.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , FQP8N90C , IRF540N , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C , FDU6N50 .
History: QM3003J
Keywords - FQP8P10 MOSFET specs
FQP8P10 cross reference
FQP8P10 equivalent finder
FQP8P10 lookup
FQP8P10 substitution
FQP8P10 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: QM3003J
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