FQP8P10 Datasheet. Specs and Replacement

Type Designator: FQP8P10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: TO220

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FQP8P10 datasheet

 ..1. Size:662K  fairchild semi
 fqp8p10.pdf pdf_icon

FQP8P10

TM QFET FQP8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to F... See More ⇒

 ..2. Size:791K  onsemi
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FQP8P10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FCP20N60, FQP7N80C, FCA20N60, FQP7P06, FQP85N06, FQP8N80C, FCPF11N60T, FQP8N90C, IRF1404, FQP9N30, FQP9N90C, FQP9P25, FQPF10N20C, FDP39N20, FQPF10N50CF, FQPF11N40C, FDU6N50

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