SJMN099R60ZSW Todos los transistores

 

SJMN099R60ZSW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN099R60ZSW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 205 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 81 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
   Paquete / Cubierta: TO-247
     - Selección de transistores por parámetros

 

SJMN099R60ZSW Datasheet (PDF)

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SJMN099R60ZSW

SJMN099R60ZSW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 600V Super-junction MOSFET Ultra fast body diode and Built-in ESD diode Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device and Halogen-free device Ordering Information G D S Part Number Marking Package TO-247-3L S

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SJMN099R60ZSW

SJMN099R65SW N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET Features 650V Super-junction MOSFET Ultra fast body diode: trr=202ns(typ.) Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN099R65SW N099R65S TO-247 Mark

 6.1. Size:669K  auk
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SJMN099R60ZSW

SJMN099RH65SW N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET Features 650V Super-junction MOSFET Ultra fast body diode: trr=202ns(typ.) Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247-3L SJMN099RH65SW N099RH65S TO-247

 9.1. Size:701K  auk
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SJMN099R60ZSW

SJMN041R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041R65SW N041R65S TO-247 Mark

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP55N06L | SH8K12 | BUZ358 | STP33N65M2 | RFL1N10L | AUIRF2804

 

 
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