SJMN165R65ZF Todos los transistores

 

SJMN165R65ZF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN165R65ZF
   Código: N165R65Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 54 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm
   Paquete / Cubierta: TO-220F
 

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SJMN165R65ZF Datasheet (PDF)

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 sjmn165r65zf.pdf pdf_icon

SJMN165R65ZF

SJMN165R65ZF Super Junction MOSFET 650V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN165R65ZF N165R65Z TO-220F-3L Marking Information Column 1:

 9.1. Size:604K  auk
 sjmn180r65cb.pdf pdf_icon

SJMN165R65ZF

SJMN180R65CB Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.18 (Max.) D DS(on) Ultra low gate charge: Qg=32nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package

 9.2. Size:679K  auk
 sjmn1k2r80zd.pdf pdf_icon

SJMN165R65ZF

SJMN1K2R80ZD Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN1K2R80ZD SJMN1K2R80Z TO-252 Marking Information Column 1, 2

 9.3. Size:764K  auk
 sjmn190r65w.pdf pdf_icon

SJMN165R65ZF

SJMN190R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-247 SJMN190R65W N190R65 TO-247

MOSTRAR MÁS

Otros transistores... SJMN074R65SW , SJMN074RH65SW , SJMN088R65F , SJMN088R65FD , SJMN088R65W , SJMN099R60ZSW , SJMN099R65SW , SJMN099RH65SW , 2N60 , SJMN180R65CB , SJMN180R65CF , SJMN190R60F , SJMN190R65B , SJMN190R65F , SJMN190R65W , SJMN1K2R80ZD , SJMN1K4R90ZD .

History: SMP3003 | IRFB3004 | IPP028N08N3G

 

 
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