FQP9N90C
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP9N90C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 205
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 900
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 8
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5
V
Qgⓘ - Carga de la puerta: 45
nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4
Ohm
Paquete / Cubierta:
TO220
- Selección de transistores por parámetros
FQP9N90C
Datasheet (PDF)
..1. Size:842K fairchild semi
fqp9n90c fqpf9n90c.pdf 
TMQFETFQP9N90C/FQPF9N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC)planar stripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to
..2. Size:1200K onsemi
fqp9n90c fqpf9n90c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:1341K fairchild semi
fqp9n50c.pdf
April 2014FQP9N50CN-Channel QFET MOSFET500 V, 9 A, 800 m DescriptionFeaturesThese N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 4.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to minim
9.2. Size:757K fairchild semi
fqp9n15.pdf
May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 150V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been espe
9.3. Size:540K fairchild semi
fqp9n08l.pdf
December 2000TMQFETQFETQFETQFETFQP9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology is
9.4. Size:1136K fairchild semi
fqp9n25c fqpf9n25c.pdf
QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor
9.5. Size:709K fairchild semi
fqp9n50.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been e
9.6. Size:1134K fairchild semi
fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf
QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor
9.7. Size:535K fairchild semi
fqp9n08.pdf
December 2000TMQFETQFETQFETQFETFQP9N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology is especi
9.8. Size:845K fairchild semi
fqp9n50c fqpf9n50c.pdf
TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to
9.9. Size:637K fairchild semi
fqp9n30.pdf
May 2000TMQFETQFETQFETQFETFQP9N30300V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 300V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been espe
9.10. Size:1136K onsemi
fqp9n25c fqpf9n25c.pdf
QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor
Otros transistores... FCA20N60
, FQP7P06
, FQP85N06
, FQP8N80C
, FCPF11N60T
, FQP8N90C
, FQP8P10
, FQP9N30
, 50N06
, FQP9P25
, FQPF10N20C
, FDP39N20
, FQPF10N50CF
, FQPF11N40C
, FDU6N50
, FQPF11N50CF
, FQPF11P06
.
