All MOSFET. FQP9N90C Datasheet

 

FQP9N90C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP9N90C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 205 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 45 nC

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO220

FQP9N90C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQP9N90C Datasheet (PDF)

1.1. fqp9n90c fqpf9n90c.pdf Size:842K _fairchild_semi

FQP9N90C
FQP9N90C

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to Fast swit

5.1. fqp9n50c.pdf Size:1341K _fairchild_semi

FQP9N90C
FQP9N90C

April 2014 FQP9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ Description Features These N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild s proprietary, ID = 4.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tailored to minim

5.2. fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf Size:1134K _fairchild_semi

FQP9N90C
FQP9N90C

® QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 45.5 pF) This advanced technology has been especially tailor

 5.3. fqp9n50.pdf Size:709K _fairchild_semi

FQP9N90C
FQP9N90C

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been e

5.4. fqp9n25c fqpf9n25c.pdf Size:1136K _fairchild_semi

FQP9N90C
FQP9N90C

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailored to Fast

 5.5. fqp9n08l.pdf Size:540K _fairchild_semi

FQP9N90C
FQP9N90C

December 2000 TM QFET QFET QFET QFET FQP9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology is

5.6. fqp9n15.pdf Size:757K _fairchild_semi

FQP9N90C
FQP9N90C

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.0A, 150V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been espe

5.7. fqp9n08.pdf Size:535K _fairchild_semi

FQP9N90C
FQP9N90C

December 2000 TM QFET QFET QFET QFET FQP9N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.9 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology is especi

5.8. fqp9n50c fqpf9n50c.pdf Size:845K _fairchild_semi

FQP9N90C
FQP9N90C

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fast swit

5.9. fqp9n30.pdf Size:637K _fairchild_semi

FQP9N90C
FQP9N90C

May 2000 TM QFET QFET QFET QFET FQP9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 300V, RDS(on) = 0.45? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tailor

Datasheet: FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , IRF640 , FQP9P25 , FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C , FDU6N50 , FQPF11N50CF , FQPF11P06 .

 
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