SJMN190R60F Todos los transistores

 

SJMN190R60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN190R60F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 46 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO-220F
     - Selección de transistores por parámetros

 

SJMN190R60F Datasheet (PDF)

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SJMN190R60F

SJMN190R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=36nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN190R60F N190R60 TO

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 sjmn190r65w.pdf pdf_icon

SJMN190R60F

SJMN190R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-247 SJMN190R65W N190R65 TO-247

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SJMN190R60F

SJMN190R65FSuper Junction MOSFETN-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN190R65F N190R65 TO-2

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 sjmn190r65b.pdf pdf_icon

SJMN190R60F

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on)D Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G S Part Number Marking Package TO-263 (D2-PAK) SJMN190R65B N

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SHD226309 | VS3620DP-G | 2SJ152 | NTMFS4925NT1G | ZVN3310F | SDF07N80 | RLP1N06CLE

 

 
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