SJMN190R65B Todos los transistores

 

SJMN190R65B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN190R65B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 846 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO-263
 

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SJMN190R65B Datasheet (PDF)

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SJMN190R65B

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on)D Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G S Part Number Marking Package TO-263 (D2-PAK) SJMN190R65B N

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 sjmn190r65w.pdf pdf_icon

SJMN190R65B

SJMN190R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-247 SJMN190R65W N190R65 TO-247

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 sjmn190r65f.pdf pdf_icon

SJMN190R65B

SJMN190R65FSuper Junction MOSFETN-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN190R65F N190R65 TO-2

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 sjmn190r60f.pdf pdf_icon

SJMN190R65B

SJMN190R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=36nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN190R60F N190R60 TO

MOSTRAR MÁS

Otros transistores... SJMN088R65W , SJMN099R60ZSW , SJMN099R65SW , SJMN099RH65SW , SJMN165R65ZF , SJMN180R65CB , SJMN180R65CF , SJMN190R60F , AON6380 , SJMN190R65F , SJMN190R65W , SJMN1K2R80ZD , SJMN1K4R90ZD , SJMN1K6R70D , SJMN230R70ZF , SJMN250R80ZB , SJMN250R80ZF .

History: SJMN180R65CB | IRLU3105PBF | IRLU8259 | STI33N65M2 | WST4041 | TMP3N90

 

 
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