SJMN600R70ZD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SJMN600R70ZD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 19 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO-252

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SJMN600R70ZD datasheet

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 sjmn600r70zd.pdf pdf_icon

SJMN600R70ZD

SJMN600R70ZD Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g D Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SJMN600R70ZD SJMN600R70Z TO-252 Marking Information Column

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 sjmn600r70zf.pdf pdf_icon

SJMN600R70ZD

SJMN600R70ZF Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R70ZF N600R70Z TO-220F-3L Marking Information Colum

 4.1. Size:567K  1
 sjmn600r70f.pdf pdf_icon

SJMN600R70ZD

SJMN600R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =750V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN600R70F N600R70 T

 4.2. Size:803K  auk
 sjmn600r70mf.pdf pdf_icon

SJMN600R70ZD

SJMN600R70MF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =750V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=15nC(Typ.) RoHS compliant device and Halogen-free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package

MOSTRAR MÁS

Otros transistores... SJMN600R65CD, SJMN600R65CF, SJMN600R65D, SJMN600R65F, SJMN600R70D, SJMN600R70I, SJMN600R70MD, SJMN600R70MF, IRFP260N, SJMN600R70ZF, SJMN670R80ZD, SJMN670R80ZF, SJMN850R80ZD, SJMN850R80ZF, SMK0260DN, SMK0260F, SMK0260I