SJMN670R80ZF Todos los transistores

 

SJMN670R80ZF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN670R80ZF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 17.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm
   Paquete / Cubierta: TO-220F

 Búsqueda de reemplazo de MOSFET SJMN670R80ZF

 

SJMN670R80ZF Datasheet (PDF)

 ..1. Size:638K  auk
sjmn670r80zf.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN670R80ZF Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN670R80ZF N670R80Z TO-220F-3L Marking Information Column 1:

 3.1. Size:686K  auk
sjmn670r80zd.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN670R80ZD Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN670R80ZD SJMN670R80Z TO-252 Marking Information Column 1,

 9.1. Size:567K  1
sjmn600r70f.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN600R70F N600R70 T

 9.2. Size:778K  auk
sjmn600r60f.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R60F N600R60 T

 9.3. Size:732K  auk
sjmn600r65cd.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R65CD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on)D Ultra low gate charge: Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN6

 9.4. Size:803K  auk
sjmn600r70mf.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R70MF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=15nC(Typ.) RoHS compliant device and Halogen-free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package

 9.5. Size:586K  auk
sjmn600r65b.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN600R65B S

 9.6. Size:629K  auk
sjmn600r70zf.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R70ZF Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R70ZF N600R70Z TO-220F-3L Marking Information Colum

 9.7. Size:779K  auk
sjmn600r65f.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R65F N600R65 T

 9.8. Size:473K  auk
sjmn600r65d.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R65D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN600R65D SJMN600R65

 9.9. Size:538K  auk
sjmn600r60d.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R60D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN600R60D SJMN600R60

 9.10. Size:759K  auk
sjmn600r70d.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R70D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJMN600R70D SJMN600R7

 9.11. Size:773K  auk
sjmn600r65cf.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN6

 9.12. Size:657K  auk
sjmn600r70i.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R70I Super Junction MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information I-PAK Part Number Marking Package (Short Lead) I-PAK SJM

 9.13. Size:678K  auk
sjmn600r70zd.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R70ZD Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SJMN600R70ZD SJMN600R70Z TO-252 Marking Information Column

 9.14. Size:781K  auk
sjmn600r70f.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R70F N600R70 T

 9.15. Size:764K  auk
sjmn600r70md.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN600R70MD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) D DS(on) Ultra low gate charge: Qg=15nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN600R

 9.16. Size:642K  kodenshi
sjmn60r38f.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN60R38F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.34 (Typ.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN60R38F SJMN60R38 TO

 9.17. Size:635K  kodenshi
sjmn60r15f.pdf

SJMN670R80ZF
SJMN670R80ZF

SJMN60R15F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.12 (Typ.) DS(on) Ultra low gate charge: Qg=62nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN60R15F SJMN60R15 TO

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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SJMN670R80ZF
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