SJMN670R80ZF. Аналоги и основные параметры
Наименование производителя: SJMN670R80ZF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 29 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 46 ns
Cossⓘ - Выходная емкость: 17.2 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.67 Ohm
Тип корпуса: TO-220F
Аналог (замена) для SJMN670R80ZF
- подборⓘ MOSFET транзистора по параметрам
SJMN670R80ZF даташит
..1. Size:638K auk
sjmn670r80zf.pdf 
SJMN670R80ZF Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN670R80ZF N670R80Z TO-220F-3L Marking Information Column 1
3.1. Size:686K auk
sjmn670r80zd.pdf 
SJMN670R80ZD Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g D Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN670R80ZD SJMN670R80Z TO-252 Marking Information Column 1,
9.1. Size:567K 1
sjmn600r70f.pdf 
SJMN600R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =750V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN600R70F N600R70 T
9.2. Size:778K auk
sjmn600r60f.pdf 
SJMN600R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =650V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R60F N600R60 T
9.3. Size:732K auk
sjmn600r65cd.pdf 
SJMN600R65CD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) D Ultra low gate charge Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN6
9.4. Size:803K auk
sjmn600r70mf.pdf 
SJMN600R70MF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =750V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=15nC(Typ.) RoHS compliant device and Halogen-free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package
9.5. Size:586K auk
sjmn600r65b.pdf 
SJMN600R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J D Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN600R65B S
9.6. Size:629K auk
sjmn600r70zf.pdf 
SJMN600R70ZF Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R70ZF N600R70Z TO-220F-3L Marking Information Colum
9.7. Size:779K auk
sjmn600r65f.pdf 
SJMN600R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R65F N600R65 T
9.8. Size:473K auk
sjmn600r65d.pdf 
SJMN600R65D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J D Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN600R65D SJMN600R65
9.9. Size:538K auk
sjmn600r60d.pdf 
SJMN600R60D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =650V (@T =150 C) DS J D Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN600R60D SJMN600R60
9.10. Size:759K auk
sjmn600r70d.pdf 
SJMN600R70D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =750V (@T =150 C) DS J D Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJMN600R70D SJMN600R7
9.11. Size:773K auk
sjmn600r65cf.pdf 
SJMN600R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN6
9.12. Size:657K auk
sjmn600r70i.pdf 
SJMN600R70I Super Junction MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source voltage V =750V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information I-PAK Part Number Marking Package (Short Lead) I-PAK SJM
9.13. Size:678K auk
sjmn600r70zd.pdf 
SJMN600R70ZD Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g D Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SJMN600R70ZD SJMN600R70Z TO-252 Marking Information Column
9.14. Size:781K auk
sjmn600r70f.pdf 
SJMN600R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =750V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) DS(on) Ultra low gate charge Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R70F N600R70 T
9.15. Size:764K auk
sjmn600r70md.pdf 
SJMN600R70MD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =750V (@T =150 C) DS J Low drain-source On resistance R =0.6 (Max.) D DS(on) Ultra low gate charge Qg=15nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN600R
9.16. Size:642K kodenshi
sjmn60r38f.pdf 
SJMN60R38F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =650V (@T =150 C) DS J Low drain-source On resistance R =0.34 (Typ.) DS(on) Ultra low gate charge Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN60R38F SJMN60R38 TO
9.17. Size:635K kodenshi
sjmn60r15f.pdf 
SJMN60R15F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =650V (@T =150 C) DS J Low drain-source On resistance R =0.12 (Typ.) DS(on) Ultra low gate charge Qg=62nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN60R15F SJMN60R15 TO
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