SNN10R10LD Todos los transistores

 

SNN10R10LD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SNN10R10LD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 52.5 nS
   Cossⓘ - Capacitancia de salida: 256 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO-252
 

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SNN10R10LD Datasheet (PDF)

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SNN10R10LD

SNN10R10LD N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BV =100V DSS Low R & FOM DS(on)D Low drain-source On resistance: R =8.5m (Typ.) DS(on) Fast switching and soft recovery Extremely low switching loss G Ordering Information S Part Number Marking Package TO-252 SNN10R10LD SNN10R10L TO-252 M

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SNN10R10LD

SNN10R10LF N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BV =100V DSS Low R & FOM DS(on) Low drain-source On resistance: R =8.5m (Typ.) DS(on) Fast switching and soft recovery Extremely low switching loss G D S Ordering Information Part Number Marking Package TO-220F-3L SNN10R10LF SNN10R10L TO-220F-3L

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SNN10R10LD

SNN1000L10DN-Ch Trench MOSFETPower Switching Application Features Drain-source breakdown voltage: BV =100V DSS Low gate charge device Low drain-source On resistance: R =68m (Typ.) DS(on)D Advanced trench process technology High avalanche energy, 100% test Ordering Information GSPart Number Marking Package TO-252 SNN1000L10D SNN1000L10 TO-25

 9.2. Size:719K  kodenshi
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SNN10R10LD

SNN1000L10D N-Ch Trench MOSFET Power Switching Application Features Drain-source breakdown voltage: BVDSS=100V Low gate charge device D Low drain-source On resistance: RDS(on)=68m (Typ.) Advanced trench process technology High avalanche energy, 100% test G Ordering Information S TO-252 Part Number Marking Package SNN1000L10D SNN1000L10 TO-252

MOSTRAR MÁS

Otros transistores... SMN03T80I , SMN0665FD , SMN630LD , SNA3100L10NL , SNA3100L10NN , SNN055N085D , SNN060L10F , SNN060L10NL , 8205A , SNN10R10LF , SNN1120L10Q , SNN1530NL , SNN1830NL , SNN200L10D , SNN300L06D , SNN3100L10D , SNN3100L10Q .

History: STI32N65M5 | SWD7N60K2F

 

 
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