AOC3870C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOC3870C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3000 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
Paquete / Cubierta: DFN3.01X1.52B-10L
Búsqueda de reemplazo de AOC3870C MOSFET
AOC3870C Datasheet (PDF)
aoc3870c.pdf
AOC3870C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3870a.pdf
AOC3870A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoc3870.pdf
AOC387012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3878.pdf
AOC387812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
Otros transistores... AOCA33103E , AOCA33104A , AOCA33104E , AOCA72104E , AONT21313C , AONT32136C , AOC3870A , AOCA32107E , RU7088R , AOCA32108E , AOCA35212E , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 .
History: IRF7103PBF-1
History: IRF7103PBF-1
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