AOC3870C Datasheet and Replacement
Type Designator: AOC3870C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3000 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: DFN3.01X1.52B-10L
AOC3870C substitution
AOC3870C Datasheet (PDF)
aoc3870c.pdf

AOC3870C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3870a.pdf

AOC3870A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoc3870.pdf

AOC387012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3878.pdf

AOC387812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
Datasheet: AOCA33103E , AOCA33104A , AOCA33104E , AOCA72104E , AONT21313C , AONT32136C , AOC3870A , AOCA32107E , MMD60R360PRH , AOCA32108E , AOCA35212E , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 , AONR30310 .
History: VBA1158N | HFS6N60U | PQ6S2JN | IRFPC30 | MMBF5103 | VS3602GPMT | BSS84LT1
Keywords - AOC3870C MOSFET datasheet
AOC3870C cross reference
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History: VBA1158N | HFS6N60U | PQ6S2JN | IRFPC30 | MMBF5103 | VS3602GPMT | BSS84LT1



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