2SK3154 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3154
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 100 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de 2SK3154 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3154 datasheet
..1. Size:88K renesas
2sk3154.pdf 
2SK3154 Silicon N Channel MOS FET High Speed Power Switching REJ03G1079-0300 (Previous ADE-208-682A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source
..2. Size:289K inchange semiconductor
2sk3154.pdf
isc N-Channel MOSFET Transistor 2SK3154 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.1. Size:175K sanyo
2sk315.pdf
Ordering number EN1005B N-Channel Junction Silicon FET 2SK315 FM Tuner Applications Features Package Dimensions Ideal for FM tuners in radios, stereos, etc. unit mm Because it is compactly packaged, sets can be made 2040A compact. [2SK315] Small Crss (Crss=0.08pF typ). 2.2 4.0 High yfs (yfs=12.0ms typ). 0.4 0.5 0.4 0.4 1 2 3 1 Drain 1.3 1.3 2 Source 3
8.2. Size:88K renesas
2sk3156.pdf
2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0301 (Previous ADE-208-683A) Rev.3.01 Apr 27, 2006 Features Low on-resistance RDS =50 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1
8.3. Size:88K renesas
2sk3155.pdf
2SK3155 Silicon N Channel MOS FET High Speed Power Switching REJ03G1080-0500 (Previous ADE-208-768C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS = 100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2
8.4. Size:109K renesas
rej03g1075 2sk3150lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:101K renesas
2sk3159.pdf
2SK3159 Silicon N Channel MOS FET High Speed Power Switching REJ03G1084-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 23 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain G (Flange) 3. Source 1 2 S 3 Rev.4.00 May 15, 2
8.6. Size:54K renesas
2sk3158.pdf
2SK3158 Silicon N Channel MOS FET High Speed Power Switching REJ03G1083-0400 (Previous ADE-208-757B) Target Specification Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain
8.7. Size:67K renesas
rej03g1083 2sk3158ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. Size:88K renesas
2sk3151.pdf
2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 (Previous ADE-208-747B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 11.5 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Sour
8.9. Size:88K renesas
2sk3152.pdf
2SK3152 Silicon N Channel MOS FET High Speed Power Switching REJ03G1077-0200 (Previous ADE-208-732) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3
8.10. Size:106K renesas
rej03g1084 2sk3159ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.11. Size:102K renesas
rej03g1080 2sk3155ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.12. Size:102K renesas
rej03g1077 2sk3152ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.13. Size:88K renesas
2sk3153.pdf
2SK3153 Silicon N Channel MOS FET High Speed Power Switching REJ03G1078-0300 (Previous ADE-208-733A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =65 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3
8.14. Size:103K renesas
rej03g1082 2sk3157ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.15. Size:89K renesas
2sk3157.pdf
2SK3157 Silicon N Channel MOS FET High Speed Power Switching REJ03G1082-0300 (Previous ADE-208-769A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS = 50 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3
8.16. Size:102K renesas
rej03g1078 2sk3153ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.17. Size:95K renesas
2sk3150.pdf
2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1075-0400 (Previous ADE-208-750B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)
8.18. Size:102K renesas
rej03g1076 2sk3151ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.19. Size:289K inchange semiconductor
2sk3156.pdf
isc N-Channel MOSFET Transistor 2SK3156 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.20. Size:280K inchange semiconductor
2sk3155.pdf
isc N-Channel MOSFET Transistor 2SK3155 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.21. Size:283K inchange semiconductor
2sk3150l.pdf
isc N-Channel MOSFET Transistor 2SK3150L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.22. Size:292K inchange semiconductor
2sk3159.pdf
isc N-Channel MOSFET Transistor 2SK3159 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.23. Size:289K inchange semiconductor
2sk3158.pdf
isc N-Channel MOSFET Transistor 2SK3158 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.24. Size:290K inchange semiconductor
2sk3151.pdf
isc N-Channel MOSFET Transistor 2SK3151 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.25. Size:357K inchange semiconductor
2sk3150s.pdf
isc N-Channel MOSFET Transistor 2SK3150S FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.26. Size:223K inchange semiconductor
2sk3152.pdf
isc N-Channel MOSFET Transistor 2SK3152 FEATURES Drain-source on-resistance RDS(on) 130m @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 120 V
8.27. Size:280K inchange semiconductor
2sk3153.pdf
isc N-Channel MOSFET Transistor 2SK3153 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V =120V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.28. Size:280K inchange semiconductor
2sk3157.pdf
isc N-Channel MOSFET Transistor 2SK3157 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Otros transistores... 2SK3142, 2SK3147, 2SK3148, 2SK3149, 2SK3150, 2SK3151, 2SK3152, 2SK3153, RU7088R, 2SK3155, 2SK3156, 2SK3157, 2SK3158, 2SK3159, 2SK3160, 2SK3161, 2SK3162
