2SK3154 Datasheet PDF and Equivalents Search

 ..1. Size:88K  renesas
 2sk3154.pdf

2SK3154 Silicon N Channel MOS FET High Speed Power Switching REJ03G1079-0300 (Previous ADE-208-682A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source ... See More ⇒

 ..2. Size:289K  inchange semiconductor
 2sk3154.pdf

isc N-Channel MOSFET Transistor 2SK3154 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.1. Size:175K  sanyo
 2sk315.pdf

Ordering number EN1005B N-Channel Junction Silicon FET 2SK315 FM Tuner Applications Features Package Dimensions Ideal for FM tuners in radios, stereos, etc. unit mm Because it is compactly packaged, sets can be made 2040A compact. [2SK315] Small Crss (Crss=0.08pF typ). 2.2 4.0 High yfs (yfs=12.0ms typ). 0.4 0.5 0.4 0.4 1 2 3 1 Drain 1.3 1.3 2 Source 3 ... See More ⇒

 8.2. Size:88K  renesas
 2sk3156.pdf

2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0301 (Previous ADE-208-683A) Rev.3.01 Apr 27, 2006 Features Low on-resistance RDS =50 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1... See More ⇒

 8.3. Size:88K  renesas
 2sk3155.pdf

2SK3155 Silicon N Channel MOS FET High Speed Power Switching REJ03G1080-0500 (Previous ADE-208-768C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS = 100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 ... See More ⇒

 8.4. Size:109K  renesas
 rej03g1075 2sk3150lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.5. Size:101K  renesas
 2sk3159.pdf

2SK3159 Silicon N Channel MOS FET High Speed Power Switching REJ03G1084-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 23 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain G (Flange) 3. Source 1 2 S 3 Rev.4.00 May 15, 2... See More ⇒

 8.6. Size:54K  renesas
 2sk3158.pdf

2SK3158 Silicon N Channel MOS FET High Speed Power Switching REJ03G1083-0400 (Previous ADE-208-757B) Target Specification Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain... See More ⇒

 8.7. Size:67K  renesas
 rej03g1083 2sk3158ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.8. Size:88K  renesas
 2sk3151.pdf

2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 (Previous ADE-208-747B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 11.5 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Sour... See More ⇒

 8.9. Size:88K  renesas
 2sk3152.pdf

2SK3152 Silicon N Channel MOS FET High Speed Power Switching REJ03G1077-0200 (Previous ADE-208-732) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 ... See More ⇒

 8.10. Size:106K  renesas
 rej03g1084 2sk3159ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.11. Size:102K  renesas
 rej03g1080 2sk3155ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.12. Size:102K  renesas
 rej03g1077 2sk3152ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.13. Size:88K  renesas
 2sk3153.pdf

2SK3153 Silicon N Channel MOS FET High Speed Power Switching REJ03G1078-0300 (Previous ADE-208-733A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =65 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 ... See More ⇒

 8.14. Size:103K  renesas
 rej03g1082 2sk3157ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.15. Size:89K  renesas
 2sk3157.pdf

2SK3157 Silicon N Channel MOS FET High Speed Power Switching REJ03G1082-0300 (Previous ADE-208-769A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS = 50 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3... See More ⇒

 8.16. Size:102K  renesas
 rej03g1078 2sk3153ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.17. Size:95K  renesas
 2sk3150.pdf

2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1075-0400 (Previous ADE-208-750B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)... See More ⇒

 8.18. Size:102K  renesas
 rej03g1076 2sk3151ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.19. Size:289K  inchange semiconductor
 2sk3156.pdf

isc N-Channel MOSFET Transistor 2SK3156 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.20. Size:280K  inchange semiconductor
 2sk3155.pdf

isc N-Channel MOSFET Transistor 2SK3155 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.21. Size:283K  inchange semiconductor
 2sk3150l.pdf

isc N-Channel MOSFET Transistor 2SK3150L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.22. Size:292K  inchange semiconductor
 2sk3159.pdf

isc N-Channel MOSFET Transistor 2SK3159 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.23. Size:289K  inchange semiconductor
 2sk3158.pdf

isc N-Channel MOSFET Transistor 2SK3158 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.24. Size:290K  inchange semiconductor
 2sk3151.pdf

isc N-Channel MOSFET Transistor 2SK3151 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.25. Size:357K  inchange semiconductor
 2sk3150s.pdf

isc N-Channel MOSFET Transistor 2SK3150S FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.26. Size:223K  inchange semiconductor
 2sk3152.pdf

isc N-Channel MOSFET Transistor 2SK3152 FEATURES Drain-source on-resistance RDS(on) 130m @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 120 V ... See More ⇒

 8.27. Size:280K  inchange semiconductor
 2sk3153.pdf

isc N-Channel MOSFET Transistor 2SK3153 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V =120V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.28. Size:280K  inchange semiconductor
 2sk3157.pdf

isc N-Channel MOSFET Transistor 2SK3157 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒