AONR26309A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AONR26309A
   Código: 26309A
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: DFN3X3A-8L

Búsqueda de reemplazo de MOSFET AONR26309A

AONR26309A Datasheet (PDF)

..1. Size:1080K aosemi
aonr26309a.pdf

AONR26309A30V Complementary MOSFETGeneral Description Product SummaryN-channel P-channelThe AONR26309A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. TheVDS (V) = 30V VDS (V) = -30Vcomplementary MOSFETs may be used in inverter andID = 14A ID = -21A (VGS = 10V)other applications.RDS(ON)

9.1. Size:312K 1
aonr21357.pdf

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

9.2. Size:318K 1
aonr21321.pdf

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

9.3. Size:314K aosemi
aonr21307.pdf

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

9.4. Size:312K aosemi
aonr21357.pdf

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

9.5. Size:383K aosemi
aonr20485.pdf

AONR2048540V P-Channel MOSFETGeneral Description Product SummaryVDS-40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -34A Low Gate Charge RDS(ON) (at VGS=-10V)

9.6. Size:545K aosemi
aonr21117.pdf

AONR2111720V P-Channel MOSFETGeneral Description Product SummaryVDS-20V Latest advanced trench technology Low RDS(ON) ID (at VGS=-4.5V) -34A High Current Capability RDS(ON) (at VGS=-4.5V)

9.7. Size:388K aosemi
aonr20334c.pdf

AONR20334C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

9.8. Size:789K aosemi
aonr21305c.pdf

AONR21305C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

9.9. Size:318K aosemi
aonr21321.pdf

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

9.10. Size:475K aosemi
aonr21311c.pdf

AONR21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -12A High Current Capability RDS(ON) (at VGS=-10V)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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