AONR26309A Todos los transistores

 ..1. Size:1080K  aosemi
 aonr26309a.pdf

AONR26309A 30V Complementary MOSFET General Description Product Summary N-channel P-channel The AONR26309A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The VDS (V) = 30V VDS (V) = -30V complementary MOSFETs may be used in inverter and ID = 14A ID = -21A (VGS = 10V) other applications. RDS(ON)

 9.1. Size:312K  1
 aonr21357.pdf

AONR21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.2. Size:318K  1
 aonr21321.pdf

AONR21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.3. Size:314K  aosemi
 aonr21307.pdf

AONR21307 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.4. Size:312K  aosemi
 aonr21357.pdf

AONR21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.5. Size:383K  aosemi
 aonr20485.pdf

AONR20485 40V P-Channel MOSFET General Description Product Summary VDS -40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -34A Low Gate Charge RDS(ON) (at VGS=-10V)

 9.6. Size:545K  aosemi
 aonr21117.pdf

AONR21117 20V P-Channel MOSFET General Description Product Summary VDS -20V Latest advanced trench technology Low RDS(ON) ID (at VGS=-4.5V) -34A High Current Capability RDS(ON) (at VGS=-4.5V)

 9.7. Size:388K  aosemi
 aonr20334c.pdf

AONR20334C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

 9.8. Size:789K  aosemi
 aonr21305c.pdf

AONR21305C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.9. Size:318K  aosemi
 aonr21321.pdf

AONR21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.10. Size:475K  aosemi
 aonr21311c.pdf

AONR21311C 30V P-Channel MOSFET General Description Product Summary VDS -30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -12A High Current Capability RDS(ON) (at VGS=-10V)