All MOSFET. AONR26309A Datasheet

 

AONR26309A MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONR26309A
   Marking Code: 26309A
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN3X3A-8L

 AONR26309A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONR26309A Datasheet (PDF)

 ..1. Size:1080K  aosemi
 aonr26309a.pdf

AONR26309A AONR26309A

AONR26309A30V Complementary MOSFETGeneral Description Product SummaryN-channel P-channelThe AONR26309A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. TheVDS (V) = 30V VDS (V) = -30Vcomplementary MOSFETs may be used in inverter andID = 14A ID = -21A (VGS = 10V)other applications.RDS(ON)

 9.1. Size:312K  1
 aonr21357.pdf

AONR26309A AONR26309A

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.2. Size:318K  1
 aonr21321.pdf

AONR26309A AONR26309A

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.3. Size:314K  aosemi
 aonr21307.pdf

AONR26309A AONR26309A

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.4. Size:312K  aosemi
 aonr21357.pdf

AONR26309A AONR26309A

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.5. Size:383K  aosemi
 aonr20485.pdf

AONR26309A AONR26309A

AONR2048540V P-Channel MOSFETGeneral Description Product SummaryVDS-40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -34A Low Gate Charge RDS(ON) (at VGS=-10V)

 9.6. Size:545K  aosemi
 aonr21117.pdf

AONR26309A AONR26309A

AONR2111720V P-Channel MOSFETGeneral Description Product SummaryVDS-20V Latest advanced trench technology Low RDS(ON) ID (at VGS=-4.5V) -34A High Current Capability RDS(ON) (at VGS=-4.5V)

 9.7. Size:388K  aosemi
 aonr20334c.pdf

AONR26309A AONR26309A

AONR20334C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

 9.8. Size:789K  aosemi
 aonr21305c.pdf

AONR26309A AONR26309A

AONR21305C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.9. Size:318K  aosemi
 aonr21321.pdf

AONR26309A AONR26309A

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.10. Size:475K  aosemi
 aonr21311c.pdf

AONR26309A AONR26309A

AONR21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -12A High Current Capability RDS(ON) (at VGS=-10V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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