All MOSFET. AONR26309A Datasheet

 

AONR26309A Datasheet and Replacement


   Type Designator: AONR26309A
   Marking Code: 26309A
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN3X3A-8L
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AONR26309A Datasheet (PDF)

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AONR26309A

AONR26309A30V Complementary MOSFETGeneral Description Product SummaryN-channel P-channelThe AONR26309A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. TheVDS (V) = 30V VDS (V) = -30Vcomplementary MOSFETs may be used in inverter andID = 14A ID = -21A (VGS = 10V)other applications.RDS(ON)

 9.1. Size:312K  1
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AONR26309A

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 9.2. Size:318K  1
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AONR26309A

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 9.3. Size:314K  aosemi
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AONR26309A

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

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Keywords - AONR26309A MOSFET datasheet

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