AONR26309A MOSFET Datasheet: NP-Ch, 30V, 21A. Full specification with pinout and replacement list

AONR26309A Specs and Replacement

Type Designator: AONR26309A

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN3X3A-8L

AONR26309A substitution

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AONR26309A datasheet

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AONR26309A 30V Complementary MOSFET General Description Product Summary N-channel P-channel The AONR26309A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The VDS (V) = 30V VDS (V) = -30V complementary MOSFETs may be used in inverter and ID = 14A ID = -21A (VGS = 10V) other applications. RDS(ON) ... See More ⇒

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AONR21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

9.2. Size:318K 1
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AONR21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

9.3. Size:314K aosemi
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AONR21307 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒