AONS66402T Todos los transistores

 

AONS66402T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AONS66402T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 142 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 224 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 1035 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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AONS66402T Datasheet (PDF)

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AONS66402T

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 5.1. Size:322K  aosemi
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AONS66402T

AONS66402TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 6.1. Size:427K  aosemi
 aons66407.pdf pdf_icon

AONS66402T

AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:414K  aosemi
 aons66408.pdf pdf_icon

AONS66402T

AONS66408TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AONS520A70 , AONS62530 , AONS62606 , AONS62614T , AONS62920 , AONS65625 , AONS660A60 , AONS660A70F , 60N06 , AONS66405 , AONS66405T , AONS66407 , AONS66408 , AONS66415 , AONS66520 , AONS66521 , AONS66524 .

History: BSZ0994NS | ZXMN20B28KTC | DHS015N06E | PJF7NA80 | SI8472DB | AP95T10GI-HF | PMV250EPEA

 

 
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