AONS66402T Datasheet and Replacement
Type Designator: AONS66402T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 224 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 1035 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: DFN5X6-8L
AONS66402T substitution
AONS66402T Datasheet (PDF)
aons66402t.pdf
AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons66402.pdf
AONS66402TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons66407.pdf
AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66408.pdf
AONS66408TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)
Datasheet: AONS520A70 , AONS62530 , AONS62606 , AONS62614T , AONS62920 , AONS65625 , AONS660A60 , AONS660A70F , IRLB3034 , AONS66405 , AONS66405T , AONS66407 , AONS66408 , AONS66415 , AONS66520 , AONS66521 , AONS66524 .
History: 2N60L-T60-K | FQPF50N06 | BLP06N08G-B
Keywords - AONS66402T MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2N60L-T60-K | FQPF50N06 | BLP06N08G-B
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