All MOSFET. AONS66402T Datasheet

 

AONS66402T Datasheet and Replacement


   Type Designator: AONS66402T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 224 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 1035 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: DFN5X6-8L
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AONS66402T Datasheet (PDF)

 ..1. Size:362K  aosemi
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AONS66402T

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 5.1. Size:322K  aosemi
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AONS66402T

AONS66402TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 6.1. Size:427K  aosemi
 aons66407.pdf pdf_icon

AONS66402T

AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:414K  aosemi
 aons66408.pdf pdf_icon

AONS66402T

AONS66408TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)

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History: LSF65R570GT | CSD16342Q5A

Keywords - AONS66402T MOSFET datasheet

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