AONS66908 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AONS66908
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 158 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 1127 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de AONS66908 MOSFET
AONS66908 Datasheet (PDF)
aons66908.pdf

AONS66908TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 158A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aons66909.pdf

AONS66909TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 160A Low RDS(ON) Excellent QG x RDS(ON) RDS(ON) (at VGS=10V)
aons66916.pdf

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66923.pdf

AONS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Otros transistores... AONS66615T , AONS66617 , AONS66620 , AONS66641 , AONS66641T , AONS66811 , AONS66814 , AONS66817 , IRFP260N , AONS66909 , AONS66916T , AONS66917 , AONS66917T , AONS66919 , AONS66920 , AONS66923 , AONS67614 .
History: SIR402DP | APM7316 | 2SK3532-01MR | HM50N06A | AP9468GM | PSMN1R7-60BS | JCS4N65BB
History: SIR402DP | APM7316 | 2SK3532-01MR | HM50N06A | AP9468GM | PSMN1R7-60BS | JCS4N65BB



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