All MOSFET. AONS66908 Datasheet

 

AONS66908 Datasheet and Replacement


   Type Designator: AONS66908
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 158 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 1127 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: DFN5X6-8L
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AONS66908 Datasheet (PDF)

 ..1. Size:416K  aosemi
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AONS66908

AONS66908TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 158A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.1. Size:422K  aosemi
 aons66909.pdf pdf_icon

AONS66908

AONS66909TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 160A Low RDS(ON) Excellent QG x RDS(ON) RDS(ON) (at VGS=10V)

 7.1. Size:313K  aosemi
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AONS66908

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:771K  aosemi
 aons66923.pdf pdf_icon

AONS66908

AONS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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History: BSZ035N03LSG | SVF9N90F

Keywords - AONS66908 MOSFET datasheet

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