FQPF27N25 Todos los transistores

 

FQPF27N25 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF27N25

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TO220F

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FQPF27N25 datasheet

 ..1. Size:765K  fairchild semi
fqpf27n25.pdf pdf_icon

FQPF27N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es

 ..2. Size:550K  onsemi
fqpf27n25.pdf pdf_icon

FQPF27N25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:760K  fairchild semi
fqpf27n25t.pdf pdf_icon

FQPF27N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es

 8.1. Size:674K  fairchild semi
fqpf27p06.pdf pdf_icon

FQPF27N25

May 2001 TM QFET FQPF27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored

Otros transistores... FQPF19N20 , HUF76429DF085 , FQPF19N20C , FCU5N60 , FQPF20N06 , FQPF20N06L , FQPF22N30 , FQPF22P10 , IRF9540N , FQPF27P06 , FQPF2N60C , FCA20N60F109 , FQPF2N70 , FQPF2N80 , FCPF16N60 , FQPF30N06L , FQPF32N20C .

History: FQPF2N60C | FQPF22P10 | FQPF20N06L

 

 

 


 
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