All MOSFET. FQPF27N25 Datasheet

 

FQPF27N25 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF27N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: TO220F

FQPF27N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF27N25 Datasheet (PDF)

1.1. fqpf27n25.pdf Size:765K _fairchild_semi

FQPF27N25
FQPF27N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 14A, 250V, RDS(on) = 0.11? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 50 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tail

4.1. fqpf27p06.pdf Size:674K _fairchild_semi

FQPF27N25
FQPF27N25

May 2001 TM QFET FQPF27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -17A, -60V, RDS(on) = 0.07? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especially tailored to • Fast s

5.1. fqpf22n30.pdf Size:738K _fairchild_semi

FQPF27N25
FQPF27N25

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 12A, 300V, RDS(on) = 0.16? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 47 nC) planar stripe, DMOS technology. • Low Crss ( typical 40 pF) This advanced technology has been especially tail

5.2. fqpf20n06.pdf Size:653K _fairchild_semi

FQPF27N25
FQPF27N25

May 2001 TM QFET FQPF20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15A, 60V, RDS(on) = 0.06? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to • Fast swi

5.3. fqpf2n80ydtu.pdf Size:966K _fairchild_semi

FQPF27N25
FQPF27N25

July 2013 FQPF2N80YDTU N-Channel QFET® MOSFET 8 0 V, 1.5 A, Ω Features Description This N-Channel enhancement mode power MOSFET is • 1.5 A, 8 0 V, RDS(on)= Ω(Max.)@VGS=10 V, ID=0.75 A produced using Fairchild Semiconductor®’s proprietary • Low Gate Charge (Typ. 12 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 5.5 pF) MOSFET technolog

5.4. fqpf2n80.pdf Size:619K _fairchild_semi

FQPF27N25
FQPF27N25

September 2000 TM QFET FQPF2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.5A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to • Fa

5.5. fqp2n60c fqpf2n60c.pdf Size:1366K _fairchild_semi

FQPF27N25
FQPF27N25

April 2006 ® QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • rDS(on) = 4.7? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. • Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to • Fa

5.6. fqpf2n70.pdf Size:622K _fairchild_semi

FQPF27N25
FQPF27N25

TM QFET FQPF2N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 700V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to • Fast switching m

5.7. fqpf22p10.pdf Size:625K _fairchild_semi

FQPF27N25
FQPF27N25

TM QFET FQPF22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -13.2A, -100V, RDS(on) = 0.125? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 160 pF) This advanced technology has been especially tailored to • Fast switch

5.8. fqpf20n06l.pdf Size:661K _fairchild_semi

FQPF27N25
FQPF27N25

May 2001 TM QFET FQPF20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.7A, 60V, RDS(on) = 0.055? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to •

Datasheet: FQPF19N20 , HUF76429D_F085 , FQPF19N20C , FCU5N60 , FQPF20N06 , FQPF20N06L , FQPF22N30 , FQPF22P10 , IRFZ48N , FQPF27P06 , FQPF2N60C , FCA20N60_F109 , FQPF2N70 , FQPF2N80 , FCPF16N60 , FQPF30N06L , FQPF32N20C .

 


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