FCA20N60_F109 Todos los transistores

 

FCA20N60_F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCA20N60_F109

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 208 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 98 nC

Resistencia drenaje-fuente RDS(on): 0.19 Ohm

Empaquetado / Estuche: TO3PN

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FCA20N60_F109 Datasheet (PDF)

1.1. fca20n60 f109.pdf Size:481K _fairchild_semi

FCA20N60_F109
FCA20N60_F109

August 2014 FCA20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an

1.2. fch20n60 fca20n60 fca20n60 f109.pdf Size:971K _fairchild_semi

FCA20N60_F109
FCA20N60_F109

December 2008 TM SuperFET FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge performanc

 2.1. fca20n60s fca20n60s f109.pdf Size:750K _upd-mosfet

FCA20N60_F109
FCA20N60_F109

August 2007 TM SuperFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.22Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate charge perform

2.2. fca20n60fs.pdf Size:952K _upd-mosfet

FCA20N60_F109
FCA20N60_F109

December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.15Ω balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

 2.3. fca20n60.pdf Size:481K _fairchild_semi

FCA20N60_F109
FCA20N60_F109

August 2014 FCA20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an

2.4. fca20n60f.pdf Size:952K _fairchild_semi

FCA20N60_F109
FCA20N60_F109

December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This advanced techn

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