FCA20N60F109 MOSFET. Datasheet pdf. Equivalent
Type Designator: FCA20N60F109
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 98 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO3PN
FCA20N60F109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCA20N60F109 Datasheet (PDF)
fca20n60f fca20n60fs.pdf
December 2008 TMSuperFETFCA20N60F 600V N-CHANNEL FRFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a
fch20n60 fca20n60 fca20n60 f109.pdf
December 2008TMSuperFETFCH20N60 / FCA20N60 / FCA20N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha
fca20n60 fca20n60 f109.pdf
August 2014FCA20N60N-Channel SuperFET MOSFET600 V, 20 A, 190 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC )resistance an
fca20n60s fca20n60s f109.pdf
August 2007TMSuperFETFCA20N60S / FCA20N60S_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perform
fca20n60.pdf
FCA20N60N-Channel SuperFET MOSFET600 V, 20 A, 190 mDescriptionSuperFET MOSFET is ON Semiconductors first genera-tion Featuresof high voltage super-junction (SJ) MOSFET family that is 650V @ TJ = 150C utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology Typ. RDS(on) = 150 mis tailored to
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
