FQPF2N70 Todos los transistores

 

FQPF2N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF2N70
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.3 Ohm
   Paquete / Cubierta: TO220F
 

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FQPF2N70 Datasheet (PDF)

 ..1. Size:622K  fairchild semi
fqpf2n70.pdf pdf_icon

FQPF2N70

TMQFETFQPF2N70700V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 700V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especially tailored to Fa

 8.1. Size:732K  fairchild semi
fqpf2n30.pdf pdf_icon

FQPF2N70

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been

 8.2. Size:726K  fairchild semi
fqpf2n90.pdf pdf_icon

FQPF2N70

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has be

 8.3. Size:1366K  fairchild semi
fqp2n60c fqpf2n60c.pdf pdf_icon

FQPF2N70

April 2006QFETFQP2N60C/FQPF2N60C2.0A, 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC)planar stripe, DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tailo

Otros transistores... FQPF20N06 , FQPF20N06L , FQPF22N30 , FQPF22P10 , FQPF27N25 , FQPF27P06 , FQPF2N60C , FCA20N60F109 , SPP20N60C3 , FQPF2N80 , FCPF16N60 , FQPF30N06L , FQPF32N20C , FDMC8854 , FQPF33N10 , FDMS9600S , FQPF33N10L .

History: FQPF2N80

 

 
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