FQPF2N70 - описание и поиск аналогов

 

FQPF2N70. Аналоги и основные параметры

Наименование производителя: FQPF2N70

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 6.3 Ohm

Тип корпуса: TO220F

Аналог (замена) для FQPF2N70

- подборⓘ MOSFET транзистора по параметрам

 

FQPF2N70 даташит

 ..1. Size:622K  fairchild semi
fqpf2n70.pdfpdf_icon

FQPF2N70

TM QFET FQPF2N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 700V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to Fa

 8.1. Size:732K  fairchild semi
fqpf2n30.pdfpdf_icon

FQPF2N70

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been

 8.2. Size:726K  fairchild semi
fqpf2n90.pdfpdf_icon

FQPF2N70

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has be

 8.3. Size:1366K  fairchild semi
fqp2n60c fqpf2n60c.pdfpdf_icon

FQPF2N70

April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo

Другие MOSFET... FQPF20N06 , FQPF20N06L , FQPF22N30 , FQPF22P10 , FQPF27N25 , FQPF27P06 , FQPF2N60C , FCA20N60F109 , K3569 , FQPF2N80 , FCPF16N60 , FQPF30N06L , FQPF32N20C , FDMC8854 , FQPF33N10 , FDMS9600S , FQPF33N10L .

History: FCA20N60F109

 

 

 


 
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