AOSP66923 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOSP66923
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AOSP66923 MOSFET
AOSP66923 Datasheet (PDF)
aosp66923.pdf
AOSP66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 12A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aosp66920.pdf
AOSP66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power AlphaSGTTM technology 100V Low RDS(ON) ID (at VGS=10V) 13.5A Logic Level Driving RDS(ON) (at VGS=10V)
aosp66925.pdf
AOSP66925TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 11A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aosp66919.pdf
AOSP66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Otros transistores... AOSD32338C , AOSP21321 , AOSP32320C , AOSP36326C , AOSP62530 , AOSP62626E , AOSP66919 , AOSP66920 , STF13NM60N , AOSP66925 , AOSS21115C , AOSS21311C , AOSS21319C , AOSS21329 , AOSS32128 , AOSS32136C , AOSS32334C .
History: IPA60R230P6 | AOSS32136C | IPL65R130C7
History: IPA60R230P6 | AOSS32136C | IPL65R130C7
Liste
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