AOTF450A70L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOTF450A70L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO220F

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AOTF450A70L Datasheet (PDF)

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aotf450a70l.pdf

AOTF450A70L/AOT450A70L/AOB450A70LTM 700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

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aotf450l.pdf

AOTF450L200V, 5.8A N-Channel MOSFETGeneral Description Product SummaryThe AOTF450L is fabricated using an advanced high VDS 250V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 5.8Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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aotf450l.pdf

isc N-Channel MOSFET Transistor AOTF450LFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.265(TYPE)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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aotf454l.pdf

AOTF454L150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOTF454L combines advanced trench MOSFET 150V13Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON).This device is ideal for boost

8.2. Size:252K inchange semiconductor
aotf454l.pdf

isc N-Channel MOSFET Transistor AOTF454LFEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R =94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOW125A60 | HSBA6016

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