AOD280A60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD280A60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 138 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 38 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AOD280A60 MOSFET
- Selecciónⓘ de transistores por parámetros
AOD280A60 datasheet
aod280a60 aoi280a60.pdf
AOD280A60/AOI280A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
aod280a60.pdf
AOD280A60/AOI280A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
aod2816.pdf
AOD2816 80V N-Channel MOSFET General Description Product Summary VDS 80V The AOD2816 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 35A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aod2810.pdf
AOD2810 80V N-Channel MOSFET General Description Product Summary VDS 80V The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
Otros transistores... AOI950A70, AOY66620, AOY66919, AOY66920, AOY66923, AOD1R4A70, AOD210V60E, AOD21357, 5N60, AOD32324, AOD32326, AOD32334C, AOD360A70, AOD380A60, AOD380A60C, AOD450A70, AOD600A60
History: IRL3102PBF
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