AOD280A60 Specs and Replacement
Type Designator: AOD280A60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 138 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO252
AOD280A60 substitution
- MOSFET ⓘ Cross-Reference Search
AOD280A60 datasheet
aod280a60 aoi280a60.pdf
AOD280A60/AOI280A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aod280a60.pdf
AOD280A60/AOI280A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aod2816.pdf
AOD2816 80V N-Channel MOSFET General Description Product Summary VDS 80V The AOD2816 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 35A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒
aod2810.pdf
AOD2810 80V N-Channel MOSFET General Description Product Summary VDS 80V The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 46A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOI950A70, AOY66620, AOY66919, AOY66920, AOY66923, AOD1R4A70, AOD210V60E, AOD21357, 5N60, AOD32324, AOD32326, AOD32334C, AOD360A70, AOD380A60, AOD380A60C, AOD450A70, AOD600A60
Keywords - AOD280A60 MOSFET specs
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