FQPF47P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF47P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 62 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de FQPF47P06 MOSFET
- Selecciónⓘ de transistores por parámetros
FQPF47P06 datasheet
..1. Size:703K fairchild semi
fqpf47p06.pdf 
May 2001 TM QFET FQPF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailore
..2. Size:935K onsemi
fqpf47p06 fqpf47p06ydtu.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.1. Size:701K fairchild semi
fqpf47p06ydtu.pdf
May 2001 TM QFET FQPF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailore
9.1. Size:549K fairchild semi
fqpf4n60.pdf
April 2000 TM QFET QFET QFET QFET FQPF4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.6A, 600V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has been e
9.2. Size:739K fairchild semi
fqpf4n25.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been
9.3. Size:568K fairchild semi
fqpf44n10.pdf
December 2000 TM QFET QFET QFET QFET FQPF44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 27A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is esp
9.4. Size:636K fairchild semi
fqpf4p40.pdf
August 2000 TM QFET QFET QFET QFET FQPF4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.4A, -400V, RDS(on) = 3.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has bee
9.5. Size:899K fairchild semi
fqp4n90c fqpf4n90c.pdf
TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to
9.6. Size:622K fairchild semi
fqpf4n90.pdf
October 2001 TM QFET FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.5A, 900V, RDS(on) = 3.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 24 nC) planar stripe, DMOS technology. Low Crss ( typically 9.5 pF) This advanced technology has been especially
9.7. Size:638K fairchild semi
fqpf4n80.pdf
September 2000 TM QFET FQPF4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially tail
9.8. Size:747K fairchild semi
fqpf46n15.pdf
April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has b
9.9. Size:668K fairchild semi
fqpf44n08 fqpf44n08t.pdf
August 2000 TM QFET QFET QFET QFET FQPF44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been e
9.10. Size:541K fairchild semi
fqpf4n20l.pdf
December 2000 TM QFET QFET QFET QFET FQPF4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technolog
9.11. Size:715K fairchild semi
fqpf4n20.pdf
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.8A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been
9.12. Size:954K fairchild semi
fqp45n15v2 fqpf45n15v2.pdf
QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 45A, 150V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 135 pF) This advanced technology has been especially tailor
9.13. Size:718K fairchild semi
fqpf4n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been
9.14. Size:1337K onsemi
fqp4n90c fqpf4n90c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FDMC8854
, FQPF33N10
, FDMS9600S
, FQPF33N10L
, FDP8442F085
, FQPF3N80C
, FDMS8680
, FQPF45N15V2
, IRF530
, FQPF4N90C
, FQPF5N40
, FDD26AN06F085
, FQPF5N90
, FQPF5P20
, FQPF630
, FDMC8296
, FQPF65N06
.
