All MOSFET. FQPF47P06 Datasheet

 

FQPF47P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF47P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 62 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 84 nC

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO220F

FQPF47P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF47P06 Datasheet (PDF)

1.1. fqpf47p06.pdf Size:703K _fairchild_semi

FQPF47P06
FQPF47P06

May 2001 TM QFET FQPF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailored to Fast

1.2. fqpf47p06ydtu.pdf Size:701K _fairchild_semi

FQPF47P06
FQPF47P06

May 2001 TM QFET FQPF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -30A, -60V, RDS(on) = 0.026Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 84 nC) planar stripe, DMOS technology. • Low Crss ( typical 320 pF) This advanced technology has been especially tailore

 5.1. fqp4n90c fqpf4n90c.pdf Size:899K _fairchild_semi

FQPF47P06
FQPF47P06

TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to Fast switch

5.2. fqpf4n80.pdf Size:638K _fairchild_semi

FQPF47P06
FQPF47P06

September 2000 TM QFET FQPF4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.2A, 800V, RDS(on) = 3.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.6 pF) This advanced technology has been especially tail

 5.3. fqpf44n08 fqpf44n08t.pdf Size:668K _fairchild_semi

FQPF47P06
FQPF47P06

August 2000 TM QFET QFET QFET QFET FQPF44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 25A, 80V, RDS(on) = 0.034Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has been e

5.4. fqpf46n15.pdf Size:747K _fairchild_semi

FQPF47P06
FQPF47P06

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 25.6A, 150V, RDS(on) = 0.042Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 85 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has b

 5.5. fqpf4n50.pdf Size:718K _fairchild_semi

FQPF47P06
FQPF47P06

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.3A, 500V, RDS(on) = 2.7Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been

5.6. fqp45n15v2 fqpf45n15v2.pdf Size:954K _fairchild_semi

FQPF47P06
FQPF47P06

QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 45A, 150V, RDS(on) = 0.04? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 135 pF) This advanced technology has been especially tailored to Fast

5.7. fqpf4p40.pdf Size:636K _fairchild_semi

FQPF47P06
FQPF47P06

August 2000 TM QFET QFET QFET QFET FQPF4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.4A, -400V, RDS(on) = 3.1Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has bee

5.8. fqpf4n60.pdf Size:549K _fairchild_semi

FQPF47P06
FQPF47P06

April 2000 TM QFET QFET QFET QFET FQPF4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.0 pF) This advanced technology has been e

5.9. fqpf44n10.pdf Size:568K _fairchild_semi

FQPF47P06
FQPF47P06

December 2000 TM QFET QFET QFET QFET FQPF44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 27A, 100V, RDS(on) = 0.039Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology is esp

5.10. fqpf4n25.pdf Size:739K _fairchild_semi

FQPF47P06
FQPF47P06

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been

5.11. fqpf4n90.pdf Size:622K _fairchild_semi

FQPF47P06
FQPF47P06

October 2001 TM QFET FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially

5.12. fqpf4n20.pdf Size:715K _fairchild_semi

FQPF47P06
FQPF47P06

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.8A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been

5.13. fqpf4n20l.pdf Size:541K _fairchild_semi

FQPF47P06
FQPF47P06

December 2000 TM QFET QFET QFET QFET FQPF4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technolog

Datasheet: FDMC8854 , FQPF33N10 , FDMS9600S , FQPF33N10L , FDP8442_F085 , FQPF3N80C , FDMS8680 , FQPF45N15V2 , STP75NF75 , FQPF4N90C , FQPF5N40 , FDD26AN06_F085 , FQPF5N90 , FQPF5P20 , FQPF630 , FDMC8296 , FQPF65N06 .

 

 
Back to Top