AOTL66518 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOTL66518
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 214 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.7 V
   Qgⓘ - Carga de la puerta: 80 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 820 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
   Paquete / Cubierta: TOLLA

Búsqueda de reemplazo de MOSFET AOTL66518

AOTL66518 Datasheet (PDF)

..1. Size:370K aosemi
aotl66518.pdf

AOTL66518TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 214A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)

6.1. Size:378K aosemi
aotl66515.pdf

AOTL66515TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 200A Area (SOA) RDS(ON) (at VGS=10V)

8.1. Size:715K aosemi
aotl66610.pdf

AOTL66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

8.2. Size:379K aosemi
aotl66215.pdf

AOTL66215TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)

8.3. Size:465K aosemi
aotl66608.pdf

AOTL66608TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

8.4. Size:369K aosemi
aotl66810.pdf

AOTL66810TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V)

8.5. Size:406K aosemi
aotl66912q.pdf

AOTL66912QTM100V N-Channel AlphaSGTAEC-Q101 QualifiedGeneral Description Product SummaryVDS100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V)

8.6. Size:658K aosemi
aotl66912.pdf

AOTL66912TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operatingarea (SOA) RDS(ON) (at VGS=10V)

8.7. Size:377K aosemi
aotl66401.pdf

AOTL66401TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

8.8. Size:375K aosemi
aotl66914.pdf

AOTL66914TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

8.9. Size:494K aosemi
aotl66915.pdf

AOTL66915TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Higher in-rush current enabled for faster start-up and ID (at VGS=10V) 339Ashorter down time RDS(ON) (at VGS=10V)

8.10. Size:413K aosemi
aotl66810q.pdf

AOTL66810QTM80V N-Channel AlphaSGT2AEC-Q101 QualifiedGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 445A Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)

8.11. Size:384K aosemi
aotl66811.pdf

AOTL66811TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 315A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

8.12. Size:369K aosemi
aotl66918.pdf

AOTL66918100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 214A (SOA) RDS(ON) (at VGS=10V)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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