AOTL66518 Specs and Replacement

Type Designator: AOTL66518

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 214 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 820 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TOLLA

AOTL66518 substitution

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AOTL66518 datasheet

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aotl66518.pdf pdf_icon

AOTL66518

AOTL66518 TM 150V N-Channel AlphaSGT General Description Product Summary VDS 150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 214A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:378K  aosemi
aotl66515.pdf pdf_icon

AOTL66518

AOTL66515 TM 150V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 200A Area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:715K  aosemi
aotl66610.pdf pdf_icon

AOTL66518

AOTL66610 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:379K  aosemi
aotl66215.pdf pdf_icon

AOTL66518

AOTL66215 TM 120V N-Channel AlphaSGT General Description Product Summary VDS 120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOTL125A60, AOTL130A60FD, AOTL160A60, AOTL190A60, AOTL42A60E, AOTL66215, AOTL66401, AOTL66515, 2N7002, AOTL66608, AOTL66610, AOTL66810, AOTL66810Q, AOTL66811, AOTL66912, AOTL66912Q, AOTL66914

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.