FXN0603D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN0603D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 91 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 62 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 224 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: TO252

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FXN0603D datasheet

 ..1. Size:316K  cn fx-semi
 fxn0603d.pdf pdf_icon

FXN0603D

FuXin Semiconductor Co., Ltd. FXN0603D Series Rev.A General Description Features The FXN0603D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:956K  cn fx-semi
 fxn0607cn.pdf pdf_icon

FXN0603D

FuXin Semiconductor Co., Ltd. FXN0607CN Series Rev.A General Description Features The FXN0607CN uses advanced Silicon s MOSFET Technology, which VDS =70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applic

 9.1. Size:983K  cn fx-semi
 fxn06s085c.pdf pdf_icon

FXN0603D

FuXin Semiconductor Co., Ltd. FXN06S085C Series Rev.A General Description Features The FXN06S085C uses advanced Split Gate MOSFET Technology, VDS = 85V Which provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)

Otros transistores... AOTE21115C, AOTE32136C, AOUS66414, AOUS66416, AOUS66616, AOUS66620, AOUS66920, AOUS66923, BS170, FXN0607CN, FXN06S085C, FXN0703D, FXN0704C, FXN0406H, FXN0503D, FXN0504D, FXN0507C