FXN0603D Specs and Replacement
Type Designator: FXN0603D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 91 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 62 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 224 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
FXN0603D substitution
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FXN0603D datasheet
fxn0603d.pdf
FuXin Semiconductor Co., Ltd. FXN0603D Series Rev.A General Description Features The FXN0603D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒
fxn0607cn.pdf
FuXin Semiconductor Co., Ltd. FXN0607CN Series Rev.A General Description Features The FXN0607CN uses advanced Silicon s MOSFET Technology, which VDS =70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applic... See More ⇒
fxn06s085c.pdf
FuXin Semiconductor Co., Ltd. FXN06S085C Series Rev.A General Description Features The FXN06S085C uses advanced Split Gate MOSFET Technology, VDS = 85V Which provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON) ... See More ⇒
Detailed specifications: AOTE21115C, AOTE32136C, AOUS66414, AOUS66416, AOUS66616, AOUS66620, AOUS66920, AOUS66923, BS170, FXN0607CN, FXN06S085C, FXN0703D, FXN0704C, FXN0406H, FXN0503D, FXN0504D, FXN0507C
Keywords - FXN0603D MOSFET specs
FXN0603D cross reference
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FXN0603D substitution
FXN0603D replacement
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