FXN06S085C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN06S085C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 153 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.8 nS
Cossⓘ - Capacitancia de salida: 496 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de FXN06S085C MOSFET
FXN06S085C Datasheet (PDF)
fxn06s085c.pdf
FuXin Semiconductor Co., Ltd. FXN06S085C Series Rev.AGeneral Description Features The FXN06S085C uses advanced Split Gate MOSFET Technology, VDS = 85V Which provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)
fxn0607cn.pdf
FuXin Semiconductor Co., Ltd.FXN0607CN Series Rev.AGeneral Description FeaturesThe FXN0607CN uses advanced Silicon s MOSFET Technology, whichVDS =70Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applic
fxn0603d.pdf
FuXin Semiconductor Co., Ltd. FXN0603D Series Rev.A General Description Features The FXN0603D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
Otros transistores... AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN , IRFP250 , FXN0703D , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C .
History: CTZ2305A | CJ3134KDW | AO3434
History: CTZ2305A | CJ3134KDW | AO3434
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM40P26S | AGM40P26E | AGM40P26AP | AGM40P25AP | AGM40P25A | AGM40P150C | AGM40P13S | AGM40P100H | AGM40P100C | AGM40P100A | AGM409D | AGM409A | AGM408MN | AGM408M | AGM406Q | AGM610MN
Popular searches
irfp260m | 2sc1213 | a1491 transistor | 2sc897 | 2sa818 | 2sa763 | a933 | 2sa818 replacement

