FXN06S085C Datasheet and Replacement. Cross Reference Search

FXN06S085C Datasheet (PDF)

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FuXin Semiconductor Co., Ltd. FXN06S085C Series Rev.AGeneral Description Features The FXN06S085C uses advanced Split Gate MOSFET Technology, VDS = 85V Which provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)

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FuXin Semiconductor Co., Ltd.FXN0607CN Series Rev.AGeneral Description FeaturesThe FXN0607CN uses advanced Silicon s MOSFET Technology, whichVDS =70Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applic

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fxn0603d.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN0603D Series Rev.A General Description Features The FXN0603D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Datasheet: AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN , STF13NM60N , FXN0703D , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C .